vs-mbr40l15cwpbf, VS-MBR40L15CW-N3 www.vishay.com vishay semiconductors revision: 17-jul-13 1 document number: 94297 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 schottky rectifier, 2 x 20 a features ? 125 c t j operation (v r < 5 v) ? optimized for or-ing applications ? ultralow forward voltage drop ? high frequency operation ? guard ring for enhanced ruggedness and long term reliability ? high purity, high temperature epoxy encapsulation for enhanced mechanical strength and mois ture resistance ? designed and qualified acc ording to jedec-jesd47 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 description the vs-mbr40l15cw... center tap schottky rectifier module has been optimized for ultralow forward voltage drop specifically for the or-ing of parallel power supplies. the proprietary barrier techno logy allows for reliable operation up to 125 c junction temperature. typical applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems. product summary package to-247ac i f(av) 2 x 20 a v r 15 v v f at i f 0.34 v i rm max. 600 ma at 100 c t j max. 125 c diode variation common cathode e as 5 mj base common cathode common cathode 2 2 13 anode 1 anode 2 to-247ac 1 2 3 available major ratings and characteristics symbol characteristics values units i f(av) rectangular wa v eform 40 a v rrm 15 v i fsm t p = 5 s sine 700 a v f 20 a pk , t j = 125 c (per leg, typical) 0.26 v t j range - 55 to 125 c voltage ratings parameter symbol test conditions vs-mbr40l15cwpbf VS-MBR40L15CW-N3 units maximum dc re v erse v oltage v r t j = 100 c 15 15 v maximum working peak re v erse v oltage v rwm absolute maximum ratings parameter symbol test conditions values units maximum a v erage ? forward current ? see fig. 5 per leg i f(av) 50 % duty cycle, at t c = 86 c, rectangular waveform 20 a per de v ice 40 maximum peak one cycle ? non-repetiti v e surge current per leg ? see fig. 7 i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 700 10 ms sine or 6 ms rect. pulse 330 non-repetiti v e a v alanche energy per leg e as t j = 25 c, i as = 2 a, l = 6 mh 5mj repetiti v e a v alanche current per leg i ar current decaying linearly to zero in 1 s ? frequency limited by t j maximum v a = 1.5 x v r typical 2a
vs-mbr40l15cwpbf, VS-MBR40L15CW-N3 www.vishay.com vishay semiconductors revision: 17-jul-13 2 document number: 94297 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse width < 300 s, duty cycle < 2 % electrical specifications parameter symbol test conditions typ. max. units maximum forward v oltage drop per leg ? see fig. 1 v fm (1) 20 a t j = 25 c -0.42 v 40 a - 0.52 20 a t j = 125 c 0.26 0.34 40 a 0.37 0.50 re v erse leakage current per leg ? see fig. 2 i rm (1) t j = 25 c v r = rated v r -10 ma t j = 100 c - 600 threshold v oltage v f(to) t j = t j maximum 0.182 v forward slope resistance r t 7.6 m ? maximum junction capacitance per leg c t v r = 5 v dc, (test signal range 100 khz to 1 mhz) 25 c - 2000 pf typical series inductance per leg l s measured lead to lead 5 mm from package b ody 8 - nh maximum v oltage rate of change dv/dt rated v r 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction temperature range t j - 55 to 125 c maximum storage temperature range t stg - 55 to 150 maximum thermal resistance, ? junction to case per leg r thjc dc operation ? see fig. 4 1.4 c/w maximum thermal resistance, ? junction to case per package dc operation 0.7 typical thermal resistance, ? case to heatsink r thcs mounting surface, smooth and greased 0.24 approximate weight 6g 0.21 oz. mounting torque minimum non-lu b ricated threads 6 (5) kgf cm (l b f in) maximum 12 (10) marking de v ice case style to-247ac (jedec) mbr40l15cw
vs-mbr40l15cwpbf, VS-MBR40L15CW-N3 www.vishay.com vishay semiconductors revision: 17-jul-13 3 document number: 94297 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 1 100 10 1000 i f - instantaneous forward current (a) v fm - forward voltage drop (v) 0.2 0.4 0.6 0. 8 1.0 1.6 1.4 1.2 0 t j = 125 c t j = 75 c t j = 25 c 1 10 100 0.1 1000 i r - reverse current (ma) v r - reverse voltage (v) 6 3912 15 0 t j = 100 c t j = 75 c t j = 50 c t j = 25 c 100 1000 10 000 c t - junction capacitance (pf) v r - reverse voltage (v) 10 51520 0 t j = 25 c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) 100 10 single p u lse (thermal resistance) d = 0.75 d = 0.50 d = 0.33 d = 0.25 d = 0.20 p dm t 1 t 2 n otes: 1. d u ty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c
vs-mbr40l15cwpbf, VS-MBR40L15CW-N3 www.vishay.com vishay semiconductors revision: 17-jul-13 4 document number: 94297 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - maximum non-re petitive surge current fig. 8 - unclamped inductive test circuit 70 75 80 85 90 95 100 allowable case temperature (c) i f(av) - average forward current (a) 10 5 15 20 25 0 square wave (d = 0.50) 0 2 6 12 10 8 4 14 average power loss (w) i f(av) - average forward current (a) 10 51520 35 30 0 dc rms limit d = 0.20 d = 0.25 d = 0.33 d = 0.50 d = 0.75 100 1000 i fsm - non-repetitive surge current (a) t p - square wave pulse duration (s) 100 1000 10 000 10 at any rated load condition and with rated v rrm applied following surge c u rrent monitor high-speed s w itch d.u.t. r g = 25 + free w heel diode v d = 25 v l irfp460 40hfl40s02
vs-mbr40l15cwpbf, VS-MBR40L15CW-N3 www.vishay.com vishay semiconductors revision: 17-jul-13 5 document number: 94297 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-mbr40l15cwpbf 25 500 antistatic plastic tube VS-MBR40L15CW-N3 25 500 antistatic plastic tube links to related documents dimensions www.vishay.com/doc?95542 part marking information to-247ac pbf www.vishay.com/doc?95226 to-247ac -n3 www.vishay.com/doc?95007 - schottky mbr series - current rating (40 = 40 a) - l = low forward voltage - voltage rating (15 = 15 v) - circuit configuration: center tap to-247 device code 6 2 4 3 5 7 mbr 40 l 15 cw pbf vs- 1 - vishay semiconductors product - pbf = lead (pb)-free and rohs compliant -n3 = halogen-free, rohs compliant, and totally lead (pb)-free environmental digit 2 3 4 5 6 7 1
outline dimensions www.vishay.com vishay semiconductors revision: 24-sep-13 1 document number: 95542 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-247 dimensions in millimeters and inches notes (1) dimensioning and tolera ncing per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jedec ? outline to-247 with exception of dimension c and q symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.35 0.020 0.053 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.17 1.37 0.046 0.054 e1 13.46 - 0.53 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 ? k 0.254 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.33 0.065 0.092 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.89 0.015 0.035 ? p1 - 7.39 - 0.291 c1 0.38 0.84 0.015 0.033 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 0.178 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc 0.10 a c m m e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c ? k b d m m a (6) p (datum b) p1 d1 (4) 4 e1 0.01 b d m m view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting
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